GlobalFoundries and Navitas Semiconductor Partner to Advance GaN Technology

U.S.-Based GaN Advancement:: The partnership focuses on strengthening U.S. semiconductor leadership by developing and manufacturing next-generation GaN technology at GF’s Burlington, Vermont facility.

High-Power Applications:: The collaboration targets critical applications in AI datacenters, performance computing, energy infrastructure, and industrial electrification, which require maximum efficiency and power density.

Technology Licensing:: GlobalFoundries has also announced a technology licensing agreement with TSMC for 650-V and 80-V Gallium Nitride (GaN) technology to accelerate its development of GaN products, with market availability projected for late 2026.

Why This Matters:: This collaboration ensures a secure and sustainable U.S.-based supply chain for GaN technologies, crucial for national security, competitiveness, and decarbonization across next-generation energy and compute platforms.

A:: GaN is a semiconductor material offering higher efficiency and power density compared to traditional silicon, making it ideal for high-power applications.

A:: The next-generation GaN technology will be manufactured at GlobalFoundries’ Burlington, Vermont facility.

A:: Key markets include AI datacenters, electric vehicles, renewable energy systems, and industrial electrification.

Stay informed about advancements in GaN technology and its impact on various industries.

Consider the implications of a secure, U.S.-based supply chain for national security and economic competitiveness.

Follow the progress of this partnership as development and production milestones are achieved.